We have investigated the photovoltage and photocurrent spectra of crystalline silicon/porous silicon heterojunctions. The porous silicon layers were prepared using anodic etching of p-type crystalline silicon at a current density of 25 mA/cm(2). From the spectral dependence of the photovoltage and photocurrent, we suggest that the photovoltaic properties of the junction are dominated by absorption in crystalline silicon only. We have also studied the effect of increase in the thickness of porous silicon layers on these spectra. We find that the open-circuit voltage of the devices increases, but the short-circuit current decreases with an increase in the thickness of the porous silicon layers. We propose a qualitative explanation for this trend, based on the increase in the series and the shunt resistance of these devices. The effect of hydrogen passivation on the junction properties by exposing the devices to hydrogen plasma is also reported.