We have investigated the photovoltaic (PV) characteristics of both glow discharge deposited hydrogenated amorphous silicon (a-Si:H) on crystalline silicon (c-Si) in a n(+) a-Si:H/undoped a-Si:H/p c-Si type structure, and DC magnetron sputtered a-Si:H in a n-type a-Si:H/p c-Si type solar cell structure. It was found that the PV properties of the solar cells were influenced very strongly by the a-Si/c-Si interface. Properties of strongly interface limited devices were found to be independent of a-Si thickness and c-Si resistivity. A hydrofluoric acid passivation prior to RF glow discharge deposition of a-Si:H increases the short circuit current density from 2.57 to 25.00 mA/cm(2) under 1 sun conditions. DC magnetron sputtering of a-Si:H in a Ar/H-2 ambient was found to be a controlled way of depositing n type a-Si:H layers on c-Si for solar cells and also a tool to study the PV response with a-Si/c-Si interface variations. 300 Angstrom a-Si sputtered onto 1-10 Omega cm p-type c-Si resulted in 10.6% efficient solar cells, without an A/R coating, with an open circuit voltage of 0.55 V and a short circuit current density of 30mA/cm(2) over a 0.3 cm(2) area. High frequency capacitance-voltage measurements indicate good junction characteristics with zero bias depletion width in c-Si of 0.65 mu m. The properties of the devices have been investigated over a wide range of variables like substrate resistivity, a-Si thickness, and sputtering power. The processing has focused on identifying and studying the conditions that result in an improved a-Si/c-Si interface that leads to better PV properties.