A monolithic, three-terminal tandem structure n-ZnSe/p-ZnTe/n-CdSe was fabricated by successive epitaxial growth from the vapor phase of ZnTe and CdSe thin layers on ZnSe single crystals. At 300K and AM1.5 the following photoelectric parameters were obtained: I-sc = 4.3 mA/cm(2), V-oc = 0.98 V, ff = 0.75, eta = 4.0% for the ZnSe/ZnTe devices and 12.8 mA/cm(2), 0.80 V, 0.53, 6.8 %, respectively, for the ZnTe/CdSe devices. The photosensitivity of the tandem structures covers the visible region of spectrum from 0.47 to 0.86 mu m. The open-circuit voltage is 1.78 V, with a total conversion efficiency 10.8%.