This paper presents, for the first time, a low-cost, high-throughput manufacturing approach for fabricating n-base dendritic web silicon solar cells with selectively doped emitters and self-aligned aluminum contacts using rapid thermal processing (RTP) and screen printing, The self-aligned locally diffused emitter (SALDE) structure is p(+)nn(+) where aluminum is screenprinted on a boron-doped emitter and fired in a belt furnace to form a deep self-doped p(+)-layer and a self-aligned positive contact to the emitter according to the well-known aluminum-silicon (Al-Si) alloying process. The SALDE structure preserves the shallow emitter (approximate to 0.2 mu m) everywhere except directly beneath the emitter contact. There the junction depth is greater than 5 mu m, as desired, in order to shield carriers in the bulk silicon from that part of the silicon surface covered by metal where the recombination rate is high. This structure is realized by using n-base (rather than p-base) substrates and by utilizing screen-printed aluminum (rather than silver) emitter contacts. Prototype dendritic web silicon (web) cells (25 cm(2) area) with efficiencies up to 13.2% have been produced.