Thin films of CuInSe2 (CIS) were prepared by XeCl excimer laser ablation on glass substrates. The deposition was carried out at 550 degrees C and the target-substrate distance was changed from 15 to 60 mm. From XRD and EPMA measurements, all films showed the single-phase and stoichiometric chalcopyrite structure, independent of the distance. The deposition rate was large with the small distance. The surface morphology and cross-sectional SEM images were observed. The electrical conductivity measurements gave p-type conduction, and the mobility was improved with the smaller distance.