CdS : Ag thin films were deposited by the chemical deposition method (solution growth), on SnO2 thin transparent electrodes, to obtain n-type window layer for PV-cell. CdS thin films were doped with silver by an ion-exchange process in a neutral 0.025 M thiosulphate Ag-complex solution. Best results were achieved at immersion times of 20-30 s at room temperature. For the sake of comparison, the doping was performed on 1/2 of the substrate surface, while the remaining part was left undoped. SnSx thin layer was deposited on the top of such a n-type layer prepared in the same way the p-type layer was selected due to its simplicity of preparation and the possibility for variation of the band gap (E-g), by varying x in the compound. Ohmic contact was produced by graphite paste backelectrodes. Two different types of PV cells were produced on the same test sample, SnO2/CdS : Ag-SnSx/C and SnO2/CdS-SnSx/C, in order to study the influence of the Ag doping of CdS, on the PV cell parameters. Dark and light I-V characteristics were recorded for the two types of cells at several different light intensities. Considerable enhancement of all cell parameters, efficiency (eta), fill factor (FF), diode factor (a), short-circuit current (I-sc), etc., was observed on the CdS : Ag-based sample. Spectral sensitivity in VIS-NIR part of the spectrum, recorded on the two types of cells, showed an improvement on the CdS : Ag-based PV cell.