We observed an n-type photoresponse in cuprous oxide films, which were prepared by a simple method of immersing copper plates in a HCl solution of 3 pH at 40 degrees C temperature, when they were used in a PEC cell. This photoresponse was much higher than the previously published values for n-Cu2O electrodes which were prepared by other methods. The photocurrent obtained was in the order of 0.3 mA/cm(2) when the cell was illuminated with light intensity of 50 mW/cm(2). (The semiconductor electrode was biased to get a zero dark current.) The power conversion efficiency of the cell was 0.01%. The maximum quantum efficiency obtained was 15%. It is hoped that these values could be improved with a better understanding of the photoelectrochemical properties of the cell.