The performance of CdTe/CdS solar cells has been successfully characterized in terms of a device model based on Shockley-Read-Hall (SRH) recombination theory. The model has been applied to a large number of devices from our laboratory in the 10-15% efficiency range and is able to provide key insights into the diode properties of our devices and the fundamental mechanisms that determine performance. Methods for the reliable measurement of key device parameters are presented, and the results are verified by simulating the characterization data in a self-consistent manner. Crossover between the dark and light J-V curves has been identified as a front contact phenomenon arising from the presence of CdS. Junction mechanisms and an observed relationship between reverse saturation current and diode quality factor are discussed. Our techniques indicate that all values of diode quality factor are between 1 and 2 which is consistent with SRH recombination theory and explainable in terms of the location and lifetimes of the recombination centers. It is found that devices with large diode factors are dominated by midgap states. Reduction of midgap states results in a reduction of the diode factor and improved performance.