The electrodeposition kinetics of thin film CdTe on stainless steel substrates was investigated. The dispersion of the refractive index is explained with the bound electron dispersion model. The non-dispersive dielectric constant and the bound electron mass were calculated. Films annealed in argon shows a higher value for non-dispersive dielectric constant. Above 0.5 V the transport mechanism changes to space-charge limited current conduction. The carrier transport is mediated with a set of traps with activation energies 0.137, 0.263 and 0.5 eV. The built-in potential of a Au-CdTe Schottky diode was measured for different wavelengths and with different white light intensities. The built-in potential at different wavelengths is almost constant in the absorption region showing the weak dependence of the built-in potential on minority carriers.