Sputtered Silicate-Limit NASICON Thin-Films for Electrochemical Sensors

Ivanov D; Currie J; Bouchard H; Lecours A; Andrian J; Yelon A; Poulin S

Solid State Ionics, Vol.67, No.3-4, 295-299, 1994

DOI10.1016/0167-2738(94)90020-5 Export Citation

Sputtered Silicate-Limit NASICON Thin-Films for Electrochemical Sensors

Ivanov D, Currie J, Bouchard H, Lecours A, Andrian J, Yelon A, Poulin S

We have demonstrated for the first time the production of silicate-limit NASICON [Na4Zr2(SiO4)3] in the form of thin films. The ionic conductivity was investigated as a function of the temperature. The best measured conductivity at 300-degrees-C is 0.5 X 10(-4) (S/cm)-1. We report here on the evaluation of the mechanical properties sputtered NASICON thin films

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