Dense, homogeneous and crack-free thin films (0.2-2 mum in thickness) of (ZrO2)0.84(YO1.5)0.16 (YSZ) were deposited on porous or dense substrates, at temperatures not exceeding 600-degrees-C, using a solution-deposition technique. The structural evolution and microstructure of the deposited films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Raman spectroscopy revealed the presence of fine-grain cubic YSZ at annealing temperatures as low as 600-degrees-C. Grain growth occurred at higher temperatures as detected by atomic force microscopy (AFM). ac impedance spectroscopy was used to study the electrical characteristics of the YSZ films as a function of temperature. The ionic conductivity and activation energy of the deposited film are similar to YSZ bulk material, but no grain-boundary effect was observed in the film. The deposited films may be considered for electrolyte application in intermediate temperature solid oxide fuel cells (SOFCs).