We have synthesized Sb1-xBixTeI (where x = 0.1, 0.4 and 0.9.). The structural variation, electrical resistivity, diffuse reflectance spectroscopy and surface morphology of Sb1-xBixTeI have been studied. The compounds crystallize with the triclinic symmetry. The temperature dependence of electrical resistivity exhibits semiconducting behaviour. The activation energy and band gap of pure SbTeI are found to be 0.37 and 0.73 eV, respectively.