We used the sol-gel method to deposit zirconia films doped with Sc2O3 and Al2O3 on alumina substrates. We investigated the annealing temperature dependence of the ionic conductivity and morphology in the films whose composition was 0.85ZrO(2)-0.11Sc(2)O(3)-0.04Al(2)O(3). The film thickness was controlled from about 0.1 to 1.0 microns by controlling the coating time. The films prepared by this method are stabilized in the cubic phase. Annealing at 1200 degrees C produces isotropic and well-sintered films. The ionic conductivity of the annealed film was 7.6 x 10(-2) S/cm at 800 degrees C, which is comparable to that of bulk samples prepared by solid reaction at 1620 degrees C.