This paper deals with the preparation of LaMnO3+/-delta (LM) layers by low pressure-metal organic chemical vapor deposition (LP-MOCVD) using La(tmhd)(3) and Mn(acac)(3) as organometallic precursors. By thermogravimetric analysis, these precursors were found to be suitable for LP-MOCVD in a well-defined range of total pressure and temperature of sublimation. The activation energies of the sublimation process were found to be independent of the pressure within the appropriate range (0.06-3 kPa) and their values were 177 and 100.5 kJ mol(-1) for La(tmhd)(3) and Mn(acac)(3), respectively. LM layers of various thickness ranging between a few and a few hundred nanometers with a controlled La/Mn (L/M) ratio between 0.87 and 1.40 were grown by changing the deposition time and composition of the vapor phase. The influence of the deposition conditions and of the post-deposition treatment on the properties of the films was also studied.