Thin Solid Films, Vol.236, No.1-2, 72-76, 1993
Thermal-Reaction of Ta Thin-Films with Polycrystalline Diamond
The thermal reaction of sputter-deposited Ta thin films with polycrystalline CVD-grown diamond substrates at temperatures between 700 degrees C and 1100 degrees C for 1 h is investigated by MeV He backscattering spectrometry, X-ray diffraction, and scanning electron microscopy. The product phases are polycrystalline Ta2C at 900 degrees C and TaC at 1000 degrees C with an initially 135 nm thick Ta film. The first phase formed conforms to the rule of Bene for metal-metal bilayers. No coexistence of Ta2C and TaC is observed during reaction. The second phase formed, TaC, is in thermodynamic equilibrium with carbon.
Keywords:CARBIDE-FORMING METAL;ELECTRICAL-PROPERTIES;OHMIC CONTACTS;SEMICONDUCTING DIAMOND;CHEMICAL NATURE;NUCLEATION;INTERFACE