The low pressure chemical vapor deposition of W chi N thin films has been investigated utilizing the reaction of tungsten hexafluoride (WF6) and ammonia (NH3) at various temperatures (450-700 degrees C). Films were prepared using a single-wafer semiconductor production machine. The film resistivities, deposition rates, preferred crystal orientation, lattice constants, stoichiometry and surface morphology observed by scanning electron micrographs will be presented and compared with chemically vapor-deposited and reactively sputtered W chi N films. Application as a barrier and/or glue layer for advanced metallization for microelectronics will be discussed.