The switching effects in amorphous GeSe2, GeSe4, GeSe2Tl and GeSe4Tl thin films have been investigated. The observed switching phenomenon for these compositions was of the memory type. The threshold switching voltage was found to increase linearly with increasing film thickness (80-740 nm), while it decreased exponentially with increasing temperature (T < T(g)). The effect of adding thallium to both amorphous GeSe2 and amorphous GeSe4 results in decreasing the values of the threshold electric field, the activation energy of switching, as well as the thermal activation energy of conduction. The results obtained are explained in accordance with the electrothermal model of breakdown.