a-Ge:H films were deposited from GeH4 using continuous-wave CO2 laser-induced chemical vapor deposition (LCVD), with SF6 as sensitizer at total pressures less than 2 mbar, The chemical composition of the gas phase was monitored in situ by mass spectrometry. The deposition rate depends strongly on the presence of digermane. No higher germanes were observed. The hydrogen content of a-Ge:H varies with the substrate temperature from 15 at.% at 150-degrees-C to 5 at.% and less for temperatures above 250-degrees-C. Fourier-transform IR spectra prove the stability of these a-Ge:H films against oxidation in air. The dark conductivity measured at 50-degrees-C ranges from 1.7 x 10(-3) S cm-1 to 6.8 x 10(-6) S cm-1, the photoconductivity varies between 1.4 x 10(-3) S cm-1 and 1.4 x 10(-5) S cm-1 measured at 150-degrees-C under approximate AM 1 illumination, and the photoeffects determined from conductivities measured at 150-degrees-C are in the range between -0.5 and 5. The activation energy lies between 0.31 eV and 0.45 eV. The Urbach energy measured by photothermal deflection spectroscopy varies between 74 meV and 120 meV.