We fabricated metal-insulator-metal-insulator-metal (MIMIM) junctions and MIM-external wire-MIM junctions by means of the conventional Langmuir-Blodgett technique in order to clarify the dielectric and electrical transport properties of MIM condensers. The tan delta value of MIMIM junctions was one-third or one-fourth as large as that of MIM-external wire-MIM junctions. In contrast, the capacitance of MIMIM junctions was nearly equal to that of MIM-external wire-MIM junctions. These experimental results were explained by assuming that middle Al/Al2O3 layers in MIMIM junctions control the number of electrons passing through the MIMIM junctions.