Thin films of WSe2 were prepared by high temperature selenization of vacuum evaporated WO3 films on quartz in an open tube furnace. The films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and optical absorption. They were found to consist of the hexagonal 2H phase. It was established that the substrate has a critical role in the growth process. A thin Ni, or Ni-Cr intermediate layer significantly accelerates the crystallization resulting in larger crystallite size compared with the WSe2 films grown on quartz substrate only. Also films prepared on Ni/quartz or Ni-Cr/quartz substrates were found to be predominantly oriented with their c-axis perpendicular to the substrate (perpendicular-to c). Raising the reaction temperature led to an improved crystallinity and perpendicular c texture. These films exhibit optical properties similar to those of a single crystal.