The structural and morphological properties of in situ phosphorus doped polycrystalline silicon films have been investigated using transmission electron microscopy. The effect of deposition parameters (temperature, pressure in a reactor chamber and phosphine-silane flow ratio in the gaseous phase) on the structure, grain size and microroughness of P-doped films have been studied. The peculiarities of recrystallization processes occurring in P-doped films during activating anneal has been investigated. The assumed production condition dependences of the P-doped film growth and recrystallization as well as the correlation between resistivity of the films and their microstructure are discussed on the basis of analysis of the obtained experimental results.