Thin films of radio-frequency sputtered Ba2Si2TiO8 (BST) were grown on Si(100) substrates at substrate temperatures ranging from 750 to 955-degrees-C for sputtering times of 1 min to 30 h. The as-deposited films were characterized using X-ray diffraction, optical microscopy, scanning electron microscopy, and energy and wavelength dispersive X-ray spectrometry. The initial growth is quasi-epitaxial, and the first grains match the structure of the Si substrate and coalesce in a non-liquid fashion. Succeeding layers take on the (001) orientation of the BST tetragonal crystal structure, ia.e. the c axis is perpendicular to the substrate. Film composition and orientation are strongly dependent on substrate temperature and deposition time (film thickness). The chemical composition analysis shows an increasing deviation of the film composition from stoichiometry with film thickness. X-ray diffraction analysis indicates an optimum temperature of 845-degrees-C for the formation of the (001) orientation, and the relative amount of the (001) orientation decreases with increasing film thickness.