A room temperature chemical method for the preparation of large area (similar or equal to 50 cm(2)) As2S3 thin films in an aqueous acidic thioacetamide (TAM) bath is described. TAM is used as a sulphide ion (S2-) source and disodium salt of ethylene diamine tetraacetic acid as a complexing agent. The preparative parameters of the bath are optimized. X-ray diffractogram, scanning electron microscope, optical absorption and electrical resistivity studies are carried out to reveal the structural and electrical properties of the films.