This paper describes a technique to deposit thin films on the inside surfaces of dielectric containers by plasma enhanced chemical vapor deposition. Radio frequency power is capacitively coupled to the plasma through the insulating container wall, creating a hollow cathode discharge. The discharge is pulsed to allow for gas exchange during the OFF part of the cycle. The ON times are so short that gas diffusion during that time can be neglected. Deposition rates and film thickness distributions have been measured as a function of process parameters, particularly the ON-OFF times. Uniform thickness distributions are obtained for OFF times much longer than a characteristic diffusion time. This technique is demonstrated by depositing silicon oxide films on the inside of cylindrical polyethylene-terephthalate tubes of 1 cm inner diameter and 10 cm length.