Highly transparent conducting undoped and Al-doped ZnO (ZnO:Al) films were prepared by atmospheric pressure chemical vapour deposition using zinc acetylacetonate (Zn(C5H7O2)(2)) zinc source and aluminium acetylacetonate (Al(C5H7O2)(3)) dopant materials. The film growth and electrical properties were considerably affected by the choice of oxygen source such as air and H2O. Milky undoped ZnO and ZnO:Al films with textured surface were prepared with thicknesses above about 400 nm. The minimum resistivities of 7.1 x 10(-3) and 3.4 x 10(-3) Ohm cm were obtained in milky ZnO:Al films prepared at substrate temperature of 350 degrees C with H2O and 550 degrees C with air respectively. For use at high temperatures, the resistivity of ZnO:Al films was more stable than that of undoped ZnO films. A sheet resistance as low as 32 Ohm/square, a transmittance of 81% and a haze ratio of 62% at a wavelength of 550 nm were obtained for milky ZnO:Al films 1000 nm thick prepared at 350 degrees C with H2O.