Thin Solid Films, Vol.253, No.1-2, 395-401, 1994
Tin-Capped TiSi2 Formation in W/TiSi2 Process for a Quarter-Micron Complementary Metal-Oxide-Semiconductor
We have investigated the diffusion of nitrogen and oxygen into TiSi2 through a thermally formed TiN capped layer. We have observed that nitrogen diffuses through the TIN capped layer into the TiSi2 layer at temperatures above 200 degrees C, but oxygen diffuses into TiSi2 through the TiN capped layer at temperatures above 400 degrees C. Both oxygen and nitrogen in the TiSi2 film increase the C49-to-C54 phase transition temperature, and also degrade the morphology of selectively deposited tungsten films.