Thin Solid Films, Vol.255, No.1-2, 132-134, 1995
Variations in the Lattice-Parameter of Porous Silicon Produced by Wetting and Vapor Adsorption
High resolution X-ray measurements of the variations in the lattice parameter of p-type porous silicon produced by wetting or vapour adsorption are reported. While pentane wetting produces only a lattice expansion. pentane vapour adsorption gives a more complex behaviour : with increasing vapour pressure there is first a lattice contraction, followed by an expansion. These results are discussed in relation to vapour adsorption mechanisms.
Keywords:ANODIC-OXIDATION;X-RAY