화학공학소재연구정보센터
Thin Solid Films, Vol.255, No.1-2, 171-173, 1995
Positron Lifetime Spectroscopy of N-Type and P-Type Porous Silicon
Positron lifetime spectroscopy was used to investigate similar to 150 mu m thick porous layers. Very significant positronium formation in the porous layer was found, amounting to similar to 20% of all positrons. The positronium lifetime is exceptionally high (40-55 ns) which indicates that the positronium interacts weakly with the pore surfaces. Aging of porous silicon can remove completely the positronium response.