The aim of this study was to explore the possible applications of porous SiGe material in photoluminescence and electroluminescence procedures. The SiGe alloy ingots were produced using the Polix method, Ge being doped with boron. The SiGe plates were etched by anodization. The porous structures were irradiated by the 514.5 nm line of a continuous wave argon laser, showing visible luminescence around 0.75 mu m.