Titanium carbide films were deposited on silicon wafers by XeCl (308 nm) excimer laser ablation of titanium in low pressure (10(-3) mbar) methane atmosphere. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J cm(-2). Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, scanning electron microscopy and Rutherford backscattering spectrometry).