Indium tin oxide (ITO) films with a resistivity of the order of 6 x 10(-4) Omega cm were deposited at room temperature on InP by pulsed laser ablation. The resistivity of the films was further reduced to less than 2 x 10(-4) Omega cm if the deposition was done at a substrate temperature of 310 degrees C. The enhanced blue response of the photovoltaic device of ITO/InP deposited at room temperature indicated improved collection efficiency near the ITO-InP interface. The dark current-voltage measurements indicated higher excess current at lower bias for the devices fabricated at 310 degrees C.