tau-Mo2N him was produced in combination with Al and Au to form a Al/tau-Mo2N/Au multilayer on silicon wafer for investigating the inhibition of the interaction between Al and Au. The interactions among the Al/tau-Mo2N/Au structure were investigated through heat treatment and analyzed with Auger depth profiling, sheet resistivity, X-ray diffractometry and scanning electron microscopy. A tau-Mo2N film with thickness above 250 nm was capable of inhibiting the interaction at temperatures below 500 degrees C. A mechanism was proposed for interpreting the observed degradation phenomenon of this multilayer structure at higher temperatures.