InxGa1-xN thin films mainly having large InN molar fractions are grown on alpha-Al2O3 (0001) and GaAs (111) B substrates by reactive evaporation, and some properties of them are investigated. C-axis oriented InxGa1-xN films are similarly obtained on each substrate; however, their crystallinity deteriorates with increasing GaN molar fractions. Band gap energies of these films are also measured and the bowing parameter is estimated.