The deposition characteristics of copper chemical vapor deposition using the liquid precursor hexafluoro-acetylacetonate-copper(1) trimethylvinylsilane are investigated. The precursor supply is directly controlled by a liquid-injection system. The deposition rate and selectivity on the substrate surface strongly depend on the carrier gas. A hydrogen carrier-gas system has a higher deposition rate and lower selectivity than an argon carrier gas. The deposition rate of copper is proportional to the square root of the precursor partial pressure under reaction-rate-limited conditions at a substrate temperature below 200 degrees C. In these conditions, a deposition rate of up to 70 nm min(-1) and an apparent activation energy of 11 kcal mol(-1) has been obtained. Surface morphology and step coverage improves with decreasing substrate temperature and increasing precursor supply. A smooth film with a low resistivity of 2.0 Omega cm can be formed superconformally on the step coverage at a substrate temperature below 18 degrees C and a high aspect ratio vias can be filled under the optimum deposition conditions.