Techniques for improved copper chemical vapour deposition (CVD) processing by the addition of trimethylvinylsilane (tmvs) and hexafluoroacetylacetone (Hhfac) during copper deposition from the volatile liquid precursor Cu(hfac)(tmvs) are described. The tmvs enables stable high vaporization rates of precursor by direct liquid injection and the Hhfac permits higher deposition rates of smoother copper films. The resistivity of the copper films averages approximately 1.8 mu Omega cm as deposited. Combined together, these results mark an important advance toward a manufacturable copper CVD process.