The etching of Cu films is achieved at lower temperature (60 degrees C) with Cl-2 plasma by IR light irradiation. Anisotropic fine Cu patterns are obtained. The etching rate increases with increasing etching pressure and Cl-2 gas flow rate, reaching levels above 1 mu m min(-1). There is no microloading or after-corrosion. The lower etching temperature and high etching rate result from the IR light enhancement of CuCl2 desorption.