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Thin Solid Films, Vol.265, No.1-2, 123-128, 1995
On the Morphology of Sb-Doped GaAs-Layers Grown by MOVPE
Morphology defects in the form of plateaus and boats are observed on the surface of Sb-doped GaAs metalorganic vapour phase epitaxy layers. Their densities are minimum at a low Sb doping level. The dislocation densities are influenced in a similar manner. A mechanism for explanation of these experimental results is proposed which accounts for previous investigations.