We report on the growth and characterization of n-type indium-doped CdTe films grown by molecular beam epitaxy on GaAs substrates. By varying the In flux we are able to control the carrier concentration in the range from 8 x 10(14) to 1.5 X 10(18) cm(-3). The samples have been investigated by photoluminescence, transport, and deep level transient spectroscopy (DLTS) measurements. By DLTS we established that the concentration of the dominant electron trap, located at 0.45 eV below the edge of the conduction band, is proportional to the net donor concentration. This result indicates that the trap may be related to the presence of indium dopants.