The influence of deposition parameters on optoelectronic and structural properties of Sn-doped In2O3 thin films grown by r.f. magnetron sputtering has been investigated. Two different targets, In/Sn (95/5 at.%) and In2O3:SnO2 (95/5 wt.%) have been studied in order to compare resulting samples and try to reduce the substrate temperature down to room temperature. By using the In/Sn target, transparent conductive indium tin oxide has been obtained at a substrate temperature of 400 degrees C, with T = 80-90% and rho similar to 10(-4) Omega cm. Meanwhile, low sheet resistance, 5-15 Omega/square, and high transmittance in the visible range, 80-90%, have been measured for ITO coatings made at room temperature with the oxidized target, by introducing very low O-2 mass-flow rates in the sputtering chamber.