Rf plasma deposited diamond-like carbon (DLC) films have been doped n-type with the addition of nitrogen as a feed gas to a magnetically confined rf plasma. Controlled amounts of nitrogen are added to the CH4/He plasma and the films are characterised. The electronic properties together with the microstructure of the deposited films are examined. Activation energy studies show the Fermi level can be moved from 0.5 eV away from the valence band for the undoped DLC films, through a maximum activation energy of 0.9 eV corresponding to the midgap and to 0.45 eV away from the conduction band with maximum N incorporation. The optical band gap first increases, indicative of a reduction in the band-edge tail states, and then tends to a steady value of similar to 2 eV. Activation energy studies together with the optical band gap data are used to analyse the density of states for the deposited films. The preferential doping configuration of the atomic nitrogen and the importance of the pi-pi* states for electronic conduction for DLC:N films is discussed in the light of the findings.