Having shown by transmission electron microscopy that a suitable electrolytic processing of boron-doped amorphous hydrogenated silicon (a-Si:H) yields porous amorphous films with a nanometre-scale microstructure similar to that of highly porous p-type crystalline silicon layers (PcSL), we report and discuss the qualitative similarities and quantitative differences between the temperature dependence of the time-resolved and steady-state photoluminescence (PL) in both materials.