We have critically evaluated the mechanism of charge transport, the understanding of which is crucial for construction of porous silicon electroluminescent devices. Multiple transport paths or space-charge-limited effects in porous silicon give rise to complex field dependence of the transport activation energy (E(A) = 0.38-0.67 eV). Direct correlation between the chemical composition of the internal surface of silicon nanocrystallites and the charge transport properties is demonstrated and the role of the tail states is emphasized. Recommendations for efficient electroluminescence, based on the microstructure and drift length, are summarized.