Thin Solid Films, Vol.276, No.1-2, 212-215, 1996
Influence of Anodization Time and Current-Density on the Photoluminescence of Porous N-Si
Porous silicon layers have been prepared from n-type Si wafers of 20-50 Omega cm. The influence of current density and electrolysis time on the intensity and peak position of the photoluminescence (PL) band has been investigated. It has also been observed that the PL intensity increases with the time after preparation of porous Si.