In this paper, we report the liquid-phase epitaxy growth of Hg1-xCdxTe films from Te-rich solution in a vertical dipping reactor system. X-ray double-crystal diffraction, IR transmittance spectra and Hall measurement are carried out to characterize the quality of epilayers. By optimizing some key growth parameters such as vapour pressure, supercooling, cooling rate and stirring frequency, Hg1-xCdxTe epilayers in both the 3-5 mu m and 8-14 mu m ranges were grown with flatness surface and uniform composition (Delta x less than or equal to 0.002). Run-to-run reproducibility of the p-type carrier concentrations after Hg annealing, were in the range of (0.5 similar to 6) x 10(16) cm(-3), while the mobilities were no less than 180 cm(2) V-1 s(-1) at 77 K.