Thin films of titanium silicide were formed by evaporative deposition of Ti onto Si with simultaneous self-ion Ti+ bombardment (SSIB PVD process) at energies up to 5.0 keV and specific powers up to W-i = 7.2 W cm(-2). Five typical zones were identified in the resistivity and phase composition vs. W, plots. The results show the formation of single-phase TiSi2 layers with resistivity values as low as 13 mu Omega cm under the conditions of W-i = 3.0-5.0 W cm(-2) and a high ion bombardment intensity. Not all the results can be interpreted by taking into account the thermal effects of ion bombardment only. The resistivity and phase composition of the films are dependent on the intensity and added energy of self-ion bombardment.