The influence of vacuum deposition parameters on the Neel point of alpha-Mn thin films has been studied using our resistivity-temperature data between 300 and 4.2 K. A sharp transition defining the Neel point at 90 +/- 1 K has been observed by plotting the temperature derivative of the resistivity against temperature for samples whose room-temperature resistivity can be regarded as that typical of bulk cr-Mn. The results show that the line width of the transition is influenced by the substrate temperature and deposition pressure. The line width increases as the perfection of the film decreases, to the extent that antiferromagnetism in manganese films vanishes as the quality of the sample resembles that of a metallic alloy glass.