The results of experimental study of InP thin film fabrication by the supercritical fluid chemical deposition (SFCD) process are presented. New solid, low toxic, atmosphere-stable phosphorous and indium precursors have been found and synthesized, analysed and applied to InP SFCD growth. High-quality InP layers were obtained by rapid expansion of a triphenylphosphine and tris(o-dimethylaminomethylphenyl)indium(III) mixture in supercritical CO2, C2F6 and Xe to the heated InP substrate in vacuum.