The carrier type and concentration of Pb1-xSnxSe (x similar to 0.06) epitaxial films grown on CaF2(111) substrates can be controlled by intentional impurity doping during growth by molecular beam epitaxy (MBE). Both elemental (Tl, Bi) and compound (Tl2Se3, Bi2Se3) sources were used as dopants for comparison purposes. p-Type films with hole concentrations in the range 10(17)-10(19) cm(-3) and up to 10(20) cm(-3) at 77 K were obtained by Tl acid Tl2Se3 doping respectively. n-Type films with electron concentrations in the range 10(17)-5 x 10(19) cm(-3) and up to 10(20) cm(-3) were obtained by Bi and Bi2Se3 doping respectively. The electrical properties, surface morphologies and crystalline quality of the films were dependent on the dopant species and concentrations. This behaviour may be attributed to the different doping mechanisms of the species.