A new type of sputtering method which can maintain a stable DC discharge at a low working Ar pressure and low applied voltage to the target has been developed in order to prepare various films with a homogeneous and dense structure and excellent properties. The DC discharge and sputtering characteristics using an Al target and the deposition rate of as-deposited Al films depended significantly on the low working Ar pressure. A very stable DC discharge can be maintained and an applied voltage to the target was 455 V at working Ar pressure of 0.25 mTorr. The maximum deposition rate occurred at a working Ar pressure of 0.3 mTorr and was about 2.87 Angstrom/W . min.