A high density, low temperature, and uniform plasma was achieved using an UHF plasma source, The UHF power was coupled with a spokewise antenna assembly. The density of the CF4/O-2 plasma was larger than 4 X 10(10) cm(-3) over a plasma diameter of 300 mm and the electron temperature was around 2.5 eV. The properties of the UHF plasma source are applicable to the future ULSI processing.